4.8 Article

Tailored semiconductors for high-harmonic optoelectronics

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SCIENCE
卷 357, 期 6348, 页码 303-306

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AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.aan2395

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资金

  1. Deutsche Forschungsgemeinschaft (DFG) [DFG-SFB755]
  2. National Research Council of Canada
  3. Natural Sciences and Engineering Research Council of Canada
  4. Canada Foundation for Innovation/Ontario Research Fund
  5. U.S. Air Force Office of Scientific Research (AFOSR) [FA9550-16-1-0109]
  6. AFOSR Multidisciplinary University Research Initiative [FA9550-15-1-0037]

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The advent of high-harmonic generation in gases 30 years ago set the foundation for attosecond science and facilitated ultrafast spectroscopy in atoms, molecules, and solids. We explore high-harmonic generation in the solid state by means of nanostructured and ion-implanted semiconductors. We use wavelength-selective microscopic imaging to map enhanced harmonic emission and show that the generation medium and the driving field can be locally tailored in solids by modifying the chemical composition and morphology. This enables the control of high-harmonic technology within precisely engineered solid targets. We demonstrate customized high-harmonic wave fields with wavelengths down to 225 nanometers (ninth-harmonic order of 2-micrometer laser pulses) and present an integrated Fresnel zone plate target in silicon, which leads to diffraction-limited self-focusing of the generated harmonics down to 1-micrometer spot sizes.

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