Linearly and Circular Dichroism in a Semiconductor with a Complex Valence Band with Allowance for Four-Photon Absorption of Light

This paper presents a theoretical study of the linear and circular dichroism of multiphoton absorption of light in semiconductors with a complex valence band. Matrix elements of optical transitions between subbands of the valence bands of a p-GaAs semiconductor are calculated. Transitions connected with both nonsimultaneous absorption of single photons and simultaneous absorption of two photons are taken into account. An expression for the temperature dependence of the coefficient of multiphoton absorption of polarized radiation with allowance for transitions between subbands of heavy and light holes is obtained.