4.5 Article

Semiconductor-metal transition induced by giant Stark effect in blue phosphorene nanoribbons

期刊

PHYSICS LETTERS A
卷 381, 期 24, 页码 2016-2020

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/j.physleta.2017.04.032

关键词

Semiconductor-metal transition; Blue phosphorene nanoribbon; Giant Stark effect; Transverse electric field

资金

  1. National Natural Science Foundation of China [11674092, 61172039]
  2. Specialized Research Fund for the Doctoral Program of Higher Education of China [20130161130004]
  3. Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics

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The electronic structures and transport properties in monolayer blue phosphorene nanoribbons (BPNRs) with transverse electric field have been studied by using density functional theory and nonequilibrium Green's functions method. The results show that the band gaps of BPNRs with both armchair and zigzag edges are linearly decreased with the increasing of the strength of transverse electric field. A semiconductor-metal transition occurs when the electric field strength reaches to 5 V/nm. The Stark coefficient presents a linear dependency on BPNRs widths, and the slopes of both zBPNRs and aBPNRs are 0.41 and 0.54, respectively, which shows a giant Stark effect occurs. Our studies show that the semiconductor-metal transition originates from the giant Stark effect. (C) 2017 Elsevier B.V. All rights reserved.

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