期刊
PHYSICAL REVIEW LETTERS
卷 119, 期 5, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.119.056803
关键词
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资金
- NSF [DMR-1508644]
- Welch Foundation [C-1682]
- National Basic Research Program of China (NBRPC) [2014CB920901]
- NSFC [11434010]
- NBRPC [2015CB921503]
- RCQM, Rice University
We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced up to fivefold as compared to the binary InAs/GaSb QSHI. Remarkably, with consequently increasing edge velocity, the edge conductance at zero and applied magnetic fields manifests time reversal symmetry-protected properties consistent with the Z(2) topological insulator. The InAs/GaInSb bilayers offer a much sought-after platform for future studies and applications of the QSHI.
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