标题
Strain induced new phase and indirect–direct band gap transition of monolayer InSe
作者
关键词
-
出版物
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 19, Issue 32, Pages 21722-21728
出版商
Royal Society of Chemistry (RSC)
发表日期
2017-07-24
DOI
10.1039/c7cp03558f
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
- (2016) Denis A. Bandurin et al. Nature Nanotechnology
- The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals
- (2016) G. W. Mudd et al. Scientific Reports
- Intrinsic Electron Mobility Exceeding 103 cm2/(V s) in Multilayer InSe FETs
- (2015) Sukrit Sucharitakul et al. NANO LETTERS
- Piezoelectricity in two-dimensional group-III monochalcogenides
- (2015) Wenbin Li et al. Nano Research
- Structural phase transitions of phosphorene induced by applied strains
- (2015) Ting Hu et al. PHYSICAL REVIEW B
- Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response
- (2015) Wei Feng et al. Journal of Materials Chemistry C
- Evolution of the Electronic Band Structure and Efficient Photo-Detection in Atomic Layers of InSe
- (2014) Sidong Lei et al. ACS Nano
- Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
- (2014) Han Liu et al. ACS Nano
- Back Gated Multilayer InSe Transistors with Enhanced Carrier Mobilities via the Suppression of Carrier Scattering from a Dielectric Interface
- (2014) Wei Feng et al. ADVANCED MATERIALS
- Superior mechanical flexibility of phosphorene and few-layer black phosphorus
- (2014) Qun Wei et al. APPLIED PHYSICS LETTERS
- High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response
- (2014) Srinivasa Reddy Tamalampudi et al. NANO LETTERS
- Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus
- (2014) Ruixiang Fei et al. NANO LETTERS
- Black phosphorus field-effect transistors
- (2014) Likai Li et al. Nature Nanotechnology
- Electrons and phonons in single layers of hexagonal indium chalcogenides fromab initiocalculations
- (2014) V. Zólyomi et al. PHYSICAL REVIEW B
- Strain-engineered direct-indirect band gap transition and its mechanism in two-dimensional phosphorene
- (2014) Xihong Peng et al. PHYSICAL REVIEW B
- Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement
- (2013) Garry W. Mudd et al. ADVANCED MATERIALS
- Nonlinear elastic behavior of two-dimensional molybdenum disulfide
- (2013) Ryan C. Cooper et al. PHYSICAL REVIEW B
- Effects of strain on electronic properties of graphene
- (2010) Seon-Myeong Choi et al. PHYSICAL REVIEW B
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- Young’s modulus of graphene: A molecular dynamics study
- (2009) Jin-Wu Jiang et al. PHYSICAL REVIEW B
- First-principles study of two- and one-dimensional honeycomb structures of boron nitride
- (2009) M. Topsakal et al. PHYSICAL REVIEW B
- Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium
- (2009) S. Cahangirov et al. PHYSICAL REVIEW LETTERS
- First-principles calculations of the ferroelastic transition between rutile-type andCaCl2-typeSiO2at high pressures
- (2008) Atsushi Togo et al. PHYSICAL REVIEW B
- Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene
- (2008) C. Lee et al. SCIENCE
- Internal lattice relaxation of single-layer graphene under in-plane deformation
- (2007) J ZHOU et al. JOURNAL OF THE MECHANICS AND PHYSICS OF SOLIDS
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