Ab initio performance predictions of single-layer In–V tunnel field-effect transistors

Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study

(2016) Jiang Cao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The rectifying and negative differential resistance effects in graphene/h-BN nanoribbon heterojunctions

(2016) Yipeng An et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

The electronic transport properties of transition-metal dichalcogenide lateral heterojunctions

(2016) Yipeng An et al.   Journal of Materials Chemistry C

First-Principles Determination of Ultralow Thermal Conductivity of monolayer WSe2

(2015) Wu-Xing Zhou et al.   Scientific Reports

Black phosphorus field-effect transistors

(2014) Likai Li et al.   Nature Nanotechnology

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

(2013) Manish Chhowalla et al.   Nature Chemistry

Computational discovery of single-layer III-V materials

(2013) Houlong L. Zhuang et al.   PHYSICAL REVIEW B

The site effects of B or N doping on I-V characteristics of a single pyrene molecular device

(2012) Zhi-Qiang Fan et al.   APPLIED PHYSICS LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

Silicene: Compelling Experimental Evidence for Graphenelike Two-Dimensional Silicon

(2012) Patrick Vogt et al.   PHYSICAL REVIEW LETTERS

Heterojunction Vertical Band-to-Band Tunneling Transistors for Steep Subthreshold Swing and High on Current

(2011) K Ganapathi et al.   IEEE ELECTRON DEVICE LETTERS

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

(2011) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Edge Hydrogenation-Induced Spin-Filtering and Rectifying Behaviors in the Graphene Nanoribbon Heterojunctions

(2011) Jing Zeng et al.   Journal of Physical Chemistry C

Tunnel field-effect transistors as energy-efficient electronic switches

(2011) Adrian M. Ionescu et al.   NATURE

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

(2009) Mathieu Luisier et al.   IEEE ELECTRON DEVICE LETTERS

Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene

(2009) Xu Du et al.   NATURE

Fabrication of a Freestanding Boron Nitride Single Layer and Its Defect Assignments

(2009) Chuanhong Jin et al.   PHYSICAL REVIEW LETTERS