期刊
OPTICS LETTERS
卷 42, 期 8, 页码 1468-1471出版社
OPTICAL SOC AMER
DOI: 10.1364/OL.42.001468
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- Agence Nationale de la Recherche (ANR) [ANR-SITQOM-15-CE24-0005]
- H European Research Council (ERC) [ERC POPSTAR 647342]
- Ministere de l'economie, de l'eindustrie et du numerique
- Delegation Generales des Entreprises (NANO programme with STMicroelectronics)
The high index contrast of the silicon-on-insulator (SOI) platform allows the realization of ultra-compact photonic circuits. However, this high contrast hinders the implementation of narrow-band Bragg filters. These typically require corrugation widths of a few nanometers or double-etch geometries, hampering device fabrication. Here we report, for the first time, to the best of our knowledge, on the realization of SOI Bragg filters based on sub-wavelength index engineering in a differential corrugation width configuration. The proposed double periodicity structure allows narrow-band rejection with a single etch step and relaxed width constraints. Based on this concept, we experimentally demonstrate a single-etch, 220 nm thick, Si Bragg filter featuring a corrugation width of 150 nm, a rejection bandwidth of 1.1 nm, and an extinction ratio exceeding 40 dB. This represents a 10-fold width increase, compared to conventional single-periodicity, single-etch counterparts with similar bandwidths. (C) 2017 Optical Society of America
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