Formation of pn-junction with stable n-doping in graphene field effect transistors using e-beam irradiation

Graphene an allotrope of carbon having outstanding electronic properties can be used as an alternative material for silicon based technology. We report the influence of electron beam irradiations by exposing graphene device to different doses ranges from 1500 mu C/cm(2)-4500 mu C/cm(2). The intensity of D peaks obtained from the Raman spectra increases gradually with the increase of e-beam dosage, which indicates that e-beam introduced localized defects in graphene. The effect of irradiations on graphene FET is also performed by studying electrical transport measurements of the device, indicating n-type doping. A decrease in charge carrier mobility upon exposure to e-beam irradiation reveals the strong effect of induced defects. We further investigated that by exposing selected region of graphene to e-beam irradiations results in the formation of pn-junction, which enable us to fabricate graphene based pn-junctions that could be beneficial for future electronics. (C) 2017 Elsevier B.V. All rights reserved.