Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

标题
Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories
作者
关键词
-
出版物
NATURE MATERIALS
Volume 17, Issue 1, Pages 49-56
出版商
Springer Nature
发表日期
2017-11-21
DOI
10.1038/nmat5028

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