Development of chip shrink technology for lateral-type GaN based HFETs using SiO2/polyimide dual IMD layers

标题
Development of chip shrink technology for lateral-type GaN based HFETs using SiO2/polyimide dual IMD layers
作者
关键词
chip shrink, AlGaN/GaN, HFETs, IMD, polyimide
出版物
Electronic Materials Letters
Volume 11, Issue 2, Pages 213-216
出版商
Springer Nature
发表日期
2015-04-10
DOI
10.1007/s13391-014-4298-9

向作者/读者发起求助以获取更多资源

Reprint

联系作者

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started