期刊
NANOTECHNOLOGY
卷 28, 期 11, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aa5baf
关键词
multilevel; conductive bridge random access memory (CBRAM); resistive switching; quantized conductance
资金
- future semiconductor Device Technology Development program - MOTIE (Ministry of Trade, Industry Energy) [10045085]
- KSRC (Korea Semiconductor Research Consortium)
- Korea Evaluation Institute of Industrial Technology (KEIT) [10045085] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
In this paper, we investigate the quantized conduction behavior of conductive bridge random access memory (CBRAM) with varied materials and ramping rates. We report stable and reproducible quantized conductance states with integer multiples of fundamental conductance obtained by optimizing the voltage ramping rate and the Ti-diffusion barrier (DB) at the Cu/HfO2 interface. Owing to controlled diffusion of Cu ions by the Ti-DB and the optimized ramping rate, through which it was possible to control the time delay of Cu ion reduction, more than seven levels of discrete conductance states were clearly observed. Analytical modeling was performed to determine the rate-limiting step in filament growth based on an electrochemical redox reaction. Our understanding of the fundamental mechanisms of quantized conductance behaviors provide a promising future for the multi-bit CBRAM device.
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