Effect of Interfacial Alloying versus “Volume Scaling” on Auger Recombination in Compositionally Graded Semiconductor Quantum Dots

标题
Effect of Interfacial Alloying versus “Volume Scaling” on Auger Recombination in Compositionally Graded Semiconductor Quantum Dots
作者
关键词
-
出版物
NANO LETTERS
Volume 17, Issue 9, Pages 5607-5613
出版商
American Chemical Society (ACS)
发表日期
2017-07-27
DOI
10.1021/acs.nanolett.7b02438

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