期刊
NANO LETTERS
卷 17, 期 3, 页码 1538-1544出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b04627
关键词
Semiconductor nanowire; germanium tin; direct band gap; absorption; photoluminescence
类别
资金
- Dutch Organization for Scientific Research [NWO-VICI 700.10.441]
- Dutch Technology Foundation [STW 12744]
- Philips Research
- NWO
- Solliance
Group IV semiconductor optoelectronic devices are now possible by using strain-free direct band gap GeSn alloys grown on a Ge/Si virtual substrate with Sn contents above 9%. Here, we demonstrate the growth of Ge/GeSn core/shell nanowire arrays with Sn incorporation up to 13% and without the formation of Sn clusters. The nanowire geometry promotes strain relaxation in the Ge0.87Sn0.13 shell and limits the formation of structural defects. This results in room-temperature photoluminescence centered at 0.465 eV and enhanced absorption above 98%. Therefore, direct band gap GeSn grown in a nanowire geometry holds promise as a low-cost and high-efficiency material for photodetectors operating in the short-wave infrared and thermal imaging devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据