期刊
MATERIALS RESEARCH BULLETIN
卷 90, 期 -, 页码 266-272出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2017.02.016
关键词
Scintillation; Ga2O3; ns(2) ions
资金
- Ministry of Education, Culture, Sports, Science and Technology of the Japanese government (MEXT) [26249147]
- JST A-step
- Grants-in-Aid for Scientific Research [17H01375] Funding Source: KAKEN
Ga2O3 crystals doped with nominally 1% ns(2) ions (In, T1, Sn, Pb, Sb and Bi) were synthesized by the Floating Zone (FZ) method, and we systematically evaluated the optical and scintillation properties. The peak emission was observed around 2.8 eV in photoluminescence (PL) under the excitation energy of 4.68 eV and around 3.0 eV in scintillation under X-ray irradiation. The PL and scintillation decay times were approximated by a sum of three exponential decay functions; and the derived decay times ranged several tens of nanoseconds, hundreds of nanoseconds and several microseconds. The slowest component was ascribed to the nsnp-ns(2) transitions while the fastest and intermediate components were blamed for the defect-related emission. Among the present samples, Sn-doped Ga2O3 showed the highest scintillation light yield. (C) 2017 Elsevier Ltd. All rights reserved.
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