The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories

标题
The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories
作者
关键词
-
出版物
LANGMUIR
Volume 33, Issue 19, Pages 4654-4665
出版商
American Chemical Society (ACS)
发表日期
2017-04-19
DOI
10.1021/acs.langmuir.7b00479

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