期刊
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
卷 83, 期 3, 页码 647-652出版社
SPRINGER
DOI: 10.1007/s10971-017-4457-1
关键词
Ferroelectricity; Sol-gel; UV irradiation; Photocurrent
资金
- Foundation of Science and Technology of Shaanxi Province [2013KJXX-36]
Low temperature fabrication of Pb(Zr0.4Ti0.6)O-3 (PZT) films is vital for development of photoelectronic devices based on ferroelectric film on Si substrate. In this work, PZT films were fabricated on Si substrate with LaNiO3 as electrode through ultraviolet assisted low-temperature sol-gel method. PZT gel films were irradiated at 150 A degrees C by ultraviolet light with wavelength of 185 and 254 nm. After annealing at a low temperature of 450-480 A degrees C, crystallized PZT films were obtained on Si substrate. Results indicated that ultraviolet irradiation increased the film density, improved the ferroelectric and photovoltaic properties of the PZT films. The obtained PZT film annealed at 480 A degrees C showed a remanent polarization of 21 mu C/cm(2) and leakage current of 9.71 x 10(-8) A/cm(2) at 100 kV/cm. Moreover, good retention and high stability of photocurrent were obtained for a 480 A degrees C-annealed PZT film. The PZT precursor films were irradiated by UV light, which can cleaves the organic group at low temperature and forms active metal-oxygen-metal bonds, furthermore, it can get rid of residual carbon, improve the density of films, consequently, well crystalline PZT films can be obtained at low temperature. [GRAPHICS]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据