Controlled reactive HiPIMS—effective technique for low-temperature (300 °C) synthesis of VO2 films with semiconductor-to-metal transition

标题
Controlled reactive HiPIMS—effective technique for low-temperature (300 °C) synthesis of VO2 films with semiconductor-to-metal transition
作者
关键词
-
出版物
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 50, Issue 38, Pages 38LT01
出版商
IOP Publishing
发表日期
2017-08-01
DOI
10.1088/1361-6463/aa8356

向作者/读者发起求助以获取更多资源

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now