期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 122, 期 25, 页码 13250-13258出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.7b08304
关键词
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资金
- Indiana University
- NSF [DMR-1608711, CHE CRIF-1048613, DMR MRI-1126394]
- Indiana University's Nanoscale Characterization Facility
- U.S. Department of Energy, Office of Science, Office of Workforce Development for Teachers and Scientists, Office of Science Graduate Student Research (SCGSR) program
- DOE [DE-SC0014664]
(GaN)(1-x)(ZnO)(x) (GZNO) is a visible-light absorber of interest for solar-driven water splitting. Here, n-type doping of the GZNO solid solution by cation substitution with group IV elements Sn and Si is reported for the first time, which was achieved by nitriding ZnGa-layered double hydroxides with SnO, or SiO2 colloids. Characterization of Si-(15 at. %, metals basis) and Sn-(3 and 4 at. %) doped analogues of GZNO revealed the formation of solid solutions, which crystallize into a wurtzite-type structure. The local structure of the Sn dopants was investigated by X-ray absorption spectroscopy which was confirmed to be a Sn(IV) center in a 4-coordinated tetrahedral environment. Structural and spectroscopic analyses were suggestive that Si and Sn are both shallow donors in GZNO. Thus, doping of GZNO with group IV elements provides a potential handle to tune the carrier transport properties of GZNO for photo electrochemical devices.
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