期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 121, 期 23, 页码 12540-12545出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.7b02253
关键词
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资金
- JSPS Postdoctoral Fellowship for Research Abroad
Cyclic voltamrnetry measurements are carried out in neutral phosphate-buffered electrolyte using n-type Ga-polar GaN thin-film photoelectrodes with and without cobalt phosphate (Co-Pi) modification. Without CO-Pi, the variation of the photo current with the bias potential exhibits a two-step behavior and under chopped illumination spikes occur at low bias potential. Thus in this regime surface recombination is dominant. Co-Pi modification suppresses surface recombination and significantly increases the photocurrent, especially for low bias potentials. At the same time, stability tests reveal that Co-Pi does not protect GaN against photocorrosion. Experiments using H2O2 imply that this photocorrosion is a reductive process and probably related to the presence of charged surface defects.
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