期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 121, 期 46, 页码 25949-25955出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.7b09622
关键词
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资金
- NSFC [21173202, 21421063, 21573201]
- MOST [2016YFA0200604, 2014CB932700]
- CUSF
- NSFC-Guangdong Joint Fund
- USTC-SCC, SCCAS, Tianjin
- Shanghai Supercomputer Centers
The most popular way to produce graphene nowadays is chemical vapor deposition, where, surprisingly, H-2 gas is routinely supplied even though it is a byproduct itself. In this study, by identifying dominant growing pathways via multiscale simulations, we unambiguously reveal the central role hydrogen played in graphene growth. Hydrogen can saturate the edges of a growing graphene island to some extent, depending on the H-2 pressure. Although graphene etching by hydrogen has been observed in experiment, hydrogen saturation actually stabilizes graphene edges by reducing the detachment rates of carbon-containing species. Such a new picture well explains some puzzling experimental observations and is also instrumental in growth protocol optimization for two-dimensional atomic crystal van der Waals epitaxy.
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