期刊
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
卷 17, 期 12, 页码 9091-9094出版社
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2017.13873
关键词
beta-Ga2O3 Photodetector; Thin Film; The Quantum Size Effect; Photoresponse
类别
资金
- National Natural Science Foundation of China [51572033, 61274017, 51572241, 11404029]
beta-Ga2O3 thin films were deposited on c-plane sapphire substrates by radio frequency magnetron sputtering technology. X-ray diffraction (XRD) results showed that the deposited beta-Ga2O3 films were oriented at ((2) over bar 01) direction. As beta-Ga2O3 thin film thickness increases, the grain size increases accordingly. Metal/semiconductor/metal structured UV PDs based on various thickness beta-Ga2O3 thin films have been fabricated. The optical and electrical properties of beta-Ga2O3 thin films are thickness dependent, such as absorption peak blue shift, band gap red shift and lower dark current. Moreover, it was found that the thickness of about 200 nm for the beta-Ga2O3 film based photodetector exhibit higher photoresponse, faster rise time and fall time.
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