Threshold Voltage Shift Variation of Vertical NAND Flash Memory Devices Dependent on Polysilicon Channel Layer Thickness

标题
Threshold Voltage Shift Variation of Vertical NAND Flash Memory Devices Dependent on Polysilicon Channel Layer Thickness
作者
关键词
-
出版物
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume 17, Issue 10, Pages 7331-7334
出版商
American Scientific Publishers
发表日期
2017-07-23
DOI
10.1166/jnn.2017.14724

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