Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations

标题
Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations
作者
关键词
-
出版物
JOURNAL OF MICROSCOPY
Volume 268, Issue 3, Pages 230-238
出版商
Wiley
发表日期
2017-07-07
DOI
10.1111/jmi.12602

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