Article
Chemistry, Physical
Qinglong Fang, Xumei Zhao, Caijuan Xia, Fei Ma
Summary: In this study, first-principle calculations were used to investigate the influence of defects on the interfacial electronic states of mMoS(2)/metal systems. The results show that defects can significantly increase the electron states at the interface and reduce the tunneling barrier. Different metals have different effects on the electronic properties of mMoS(2) when defects are induced.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Materials Science, Multidisciplinary
Muhammad Ismail, Haider Abbas, Chandreswar Mahata, Changhwan Choi, Sungjun Kim
Summary: This study demonstrates that the optimization of the interfacial barrier layer can improve the switching cycle endurance and uniformity of resistive random access memory (ReRAM) devices. The results show that a Ta2O5 barrier layer with a thickness of approximately 2 nm provides lower forming voltage, narrow distribution of SET-voltages, good switching cycles, high pulse endurance, long retention time, and reliable multilevel resistance states. The multilevel resistance states were scientifically investigated by modulating the compliance current and RESET-stop voltages, and were found to be distinct and stable. The ZrO2-based ReRAM device with an optimized Ta2O5 barrier layer is a promising candidate for multilevel data storage memory applications.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
(2022)
Article
Materials Science, Ceramics
Gustavo M. Fortes, Andre L. da Silva, Lorena B. Caliman, Fabio C. Fonseca, Douglas Gouvea
Summary: In this study, interfacial segregation was explored as a strategy to enhance the electrical conductivity of Cl--doped ZnO. Cl-anions were found to segregate at the surface and grain boundaries, leading to a significant reduction in electrical resistivity. The calculated electric potential barrier height and activation energy for conduction also decreased with Cl-doping.
CERAMICS INTERNATIONAL
(2021)
Article
Engineering, Electrical & Electronic
Ferran Reverter
Summary: This article proposes a method to reduce the loading effects in a linear circuit when measuring a dc voltage or current with a digital multimeter (DMM). In the proposed method, the voltmeter is placed in series to estimate the current, while the ammeter is placed in parallel to estimate the voltage, which is opposite to the conventional approach. This method is particularly useful when the equivalent resistance between the nodes of the measured dc voltage or current is high or low. Compared to the conventional method, the relative error is reduced up to a factor of 10(4) if the equivalent resistance matches the shunt or input resistance of the DMM during dc current or voltage measurement.
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
(2022)
Article
Chemistry, Physical
Gaabhin Ryu, Kwangseok Park, Hyoungsoo Kim
Summary: The oxygen solubility in the solvent media affects the eccentricity and behavior of gallium-based liquid metal droplets. The formation of an oxide membrane determines whether the droplets behave in a liquidlike or solidlike manner. The adsorption of solvent molecules changes the surface energy of the oxide layer. The findings provide insights into the relationship between droplet behavior and solvent properties.
JOURNAL OF COLLOID AND INTERFACE SCIENCE
(2022)
Article
Chemistry, Physical
Cheng Yan, Xiankan Zeng, Qungui Wang, Xiaodong Peng, Wen Li, Jingjing Cao, Yue Gao, Xiang Chu, Xuehai Fu, Shiyu Yang, Yongjian Chen, Weiqing Yang
Summary: This study provides insights into the interfacial energetics of LEDs and explores their potential applications in high-speed modulation.
Article
Nanoscience & Nanotechnology
Po-Han Chen, Chun-An Chen, Yu-Ting Lin, Ping-Yi Hsieh, Meng-Hsi Chuang, Xiaoze Liu, Tung-Ying Hsieh, Chang-Hong Shen, Jia-Min Shieh, Meng-Chyi Wu, Yung-Fu Chen, Chih-Chao Yang, Yi-Hsien Lee
Summary: Heterogeneous integration of monolayers is an effective approach to combine materials with available platforms for unprecedented properties. The challenge lies in manipulating interfacial configurations in stacking architecture. This study focuses on the interfacial traps of monolayer MoS2 and illustrates a mechanism for the onset of saturation photocurrent and the reset behavior in the monolayer photodetector. The response time for photocurrent can be significantly reduced through electrostatic passivation of interfacial traps, paving the way for fast-speed and ultrahigh gain devices of stacked two-dimensional monolayers.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Engineering, Electrical & Electronic
Sukru Cavdar, Yesim Demirolmez, Neslihan Turan, Haluk Koralay, Nihat Tugluoglu
Summary: This study investigates the capacitance and conductance properties of ZnCo2O4-doped Gelatin, showing the significance of interface states. Capacitance and conductance characteristics reveal a correlation between the increase in capacitance values at lower frequencies and interface state density.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2022)
Article
Physics, Multidisciplinary
B. Baris, D. E. Yildiz, S. Karadeniz, D. A. Kose, M. O. Erdal, M. Yildirim
Summary: In this study, Mn doped complexes were synthesized and used as interfacial layers in Au/Mn-complex/n-Si structures. The morphological analysis showed relatively smooth and well ordered surfaces. The electrical properties, including dielectric, electrical modulus, resistance, interface states, and ac conductivity, were investigated at various frequencies and voltages. The results indicated that capacitance and conductivity exhibited strong frequency dependence.
Article
Chemistry, Physical
Yuge Bai, Nan Li, Chao Yang, Xiaodong Wu, Hengrui Yang, Weimeng Chen, Hongjie Li, Bin Zhao, Peng-Fei Wang, Xiaogang Han
Summary: The modification of electrodes using ALD technique significantly improves the electrochemical performance of supercapacitors, leading to increased gravimetric capacitance and expanded operational voltage window. Models were established to discuss the charge storage mechanism and reasons for the stability of the modified electrodes under higher voltage. The ALD modified electrodes also demonstrated excellent rate and cycling performance in flexible electrochemical double-layer capacitors, highlighting their application superiority in flexible devices and potential for energy storage applications.
JOURNAL OF POWER SOURCES
(2021)
Article
Materials Science, Multidisciplinary
Fan Zhang, Ziyu He, Kai Lu, Zhaolin Zhan, Zulai Li, Xiao Wang
Summary: This study investigates the use of AlCoCrFeNi high entropy alloy to enhance 2124 aluminum alloy composites. The results show that the composites exhibit lower friction coefficient and wear rate compared to 2124 aluminum alloys. Additionally, the yield strength of the composites is almost double that of AA2124.
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T
(2023)
Article
Chemistry, Physical
Ya-Qing Zhou, Yao Zhou, Jun-Tao Li, Sandrine Zanna, Antoine Seyeux, Philippe Marcus, Jolanta Swiatowska
Summary: The effect of different ethanol fractions in water electrolyte on the corrosion behavior of Mg and the discharge performances of batteries is studied. It is found that a high content of ethanol (>= 20 vol%) in the electrolyte leads to significant corrosion inhibition and the formation of a thinner and more corrosion protective layer enriched in magnesium oxide. On the contrary, a thick, porous, and rough layer mainly composed of magnesium hydroxide is formed in water-based electrolyte. By adjusting the ethanol to water fraction, even a small ethanol content (<= 5 vol%) can greatly enhance the electrochemical performances of Mg anode, with 0.5 vol% showing the best performances in terms of limited corrosion rate, improved discharge performance, and battery lifetime.
APPLIED SURFACE SCIENCE
(2023)
Article
Chemistry, Multidisciplinary
Mohammad Bahmani, Mahdi Ghorbani-Asl, Thomas Frauenheim
Summary: The coexistence of semiconducting and metallic phases in MoS2 monolayers enhances their potential for applications in two-dimensional lateral heterojunction-based electronic devices. Structural defects have significant effects on device properties, with vacancies in semiconducting MoS2 acting as scattering centers but improving charge carrier flow at the interface. The enhancement of transmission is attributed to changes in electronic densities at the T-H interface, creating new transport channels for electron conduction.
Article
Engineering, Electrical & Electronic
Jian Zhai, Wenhui Lu, Jianguo Chen, Jinrong Cheng
Summary: PLZT antiferroelectric thin films with different thicknesses were prepared on LaNiO3-buffered stainless steel substrates by the sol-gel method. XRD analysis and SEM pictures confirmed the pure perovskite structure and smooth surface of the films. The results showed that increasing film thickness led to higher polarization, dielectric constant, and reduced dielectric loss. Additionally, the PLZT thin films exhibited good insulation properties and a large electrocaloric effect at room temperature.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Danghui Wang, Junna Zheng, Yang Zhang, Tianhan Xu, Eddy Simoen, Bogdan Govoreanu, Cor Claeys
Summary: The electrical properties of nMOSFET devices with different high-k Al2O3 capping layer thickness and TiN electrode were systematically studied at deep cryogenic temperatures ranging from 10 to 300 K. All electrical parameters showed strong temperature dependence within the studied temperatures, and the temperature-dependent properties of the devices were modulated at different cryogenic temperatures due to the presence of the Al2O3 capping layer, which affected the oxide trap density and consequently adjusted the threshold voltage and mobility of the devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Y. Badali, Y. Azizian-Kalandaragh, Ehsan A. Akhlaghi, S. Altindal
JOURNAL OF ELECTRONIC MATERIALS
(2020)
Article
Materials Science, Multidisciplinary
Abdulkerim Karabulut, Adem Sarilmaz, Faruk Ozel, Ikram Orak, Mehmet Akif Sahinkaya
CURRENT APPLIED PHYSICS
(2020)
Article
Engineering, Electrical & Electronic
A. Turut, D. E. Yildiz, A. Karabulut, I. Orak
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2020)
Article
Engineering, Electrical & Electronic
Engin Arslan, Yosef Badali, Semsettin Altindal, Ekmel Ozbay
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2020)
Article
Engineering, Electrical & Electronic
Hasan Elamen, Yosef Badali, Muhammet Tahir Guneser, Semsettin Altindal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2020)
Article
Chemistry, Physical
Ilhan Uzun, Ikram Orak, Hatice Karaer Yagmur, Mehmet Karakaplan, Murat Yalman
Summary: The compounds 5-(2,4-dichlorophenyl)-2-furoic acid and anthraquinone-2-carboxylic acid were reacted with chitin to synthesize products characterized by spectroscopic methods. These chitin derivatives were then used as interface layers for the construction of diodes, with the Al/CA2CA/p-Si diode found to be closer to the ideal compared to the Al/C524D2FA/p-Si diode and previous studies using Al and p-Si diodes.
Article
Chemistry, Multidisciplinary
Engin Arslan, Yosef Badali, Majid Aalizadeh, Semsettin Altindal, Ekmel Ozbay
Summary: In this study, HfAlO3 ternary alloy thin film was grown on n-type silicon using atomic layer deposition. The current transport mechanisms in the (Au/Ni/HfAlO3/n-Si junction were examined over a wide temperature range (80-360 K), showing variations in ideality factor and barrier height. The presence of Gaussian distribution barrier height was identified at different temperatures, providing insights into the non-ideal behavior of the Richardson curves.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
(2021)
Article
Materials Science, Multidisciplinary
Fikriye Seyma Kaya, Songul Duman, Ikram Orak, Ozlem Baris
Summary: In this study, Au/n-GaP/Al and Au/chlorophyll-a/n-GaP/Al structures were fabricated using n-type GaP semiconductor. The performance characteristics of these structures were analyzed using SEM, I-V measurements, and C-V measurements, revealing that the chl-a thin film has an impact on the photovoltaic parameters of the Au/n-GaP/Al structure.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
M. C. Ozdemir, O. Sevgili, I Orak, A. Turut
Summary: Experimental investigation on the temperature-induced current-voltage characteristics of Al/SiO2/p-Si diodes revealed significant differences in tunneling factor and potential barrier values, as well as a Gaussian distribution of inhomogeneous barrier heights.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Materials Science, Multidisciplinary
Yosef Badali, Javid Farazin, Gholamreza Pirgholi-Givi, Semsettin Altindal, Yashar Azizian-Kalandaragh
Summary: The influence of a thin polymer interface film on the electrical and dielectric characteristics of metal-semiconductor structures was studied. Experimental results showed that the Bi2Te3-Gr: PVP organic layer can improve the quality of the metal-semiconductor structure.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2021)
Article
Chemistry, Multidisciplinary
Yosef Badali, Engin Arslan, Turkan Gamze Ulusoy Ghobadi, Suleyman Ozcelik, Ekmel Ozbay
Summary: The study investigated amorphous gallium oxide thin films as gate dielectrics using plasma-enhanced atomic layer deposition. The films showed smooth surface morphology, amorphous structure, and good dielectric behavior with low trap density.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
(2022)
Article
Engineering, Electrical & Electronic
Osman Cicek, Engin Arslan, Semsettin Altindal, Yosef Badali, Ekmel Ozbay
Summary: This study experimentally demonstrates that the highest sensitivity value (21.2 mV/K) of the Ni-(50 nm)-Au-(100nm)/Ga2O3/p-Si vertical MOS type diode in temperature sensing can be obtained by using the constant capacitance mode at 1 nF, which is higher than the results reported in the literature except in the cryogenic temperature region and near room temperature.
IEEE SENSORS JOURNAL
(2022)
Article
Engineering, Electrical & Electronic
Hayriye Gokcen Cetinkaya, Osman Cicek, Semsettin Altindal, Yosef Badali, Selcuk Demirezen
Summary: This study experimentally investigated the sensitivity and current conduction mechanisms of vertical CdTe:PVP/p-Si SBD temperature sensors, revealing different voltage ranges in linear regions and analyzing the temperature-dependent variations of Schottky barrier height and ideality factor. The dominant mechanism was identified as the thermionic emission theory with double-Gaussian distribution, resulting in sensitivity values ranging from -1.6 to -1.8 mV/K at constant current.
IEEE SENSORS JOURNAL
(2022)
Article
Physics, Condensed Matter
Yashar Azizian-Kalandaragh, Yosef Badali, Mir-Ahmad Jamshidi-Ghozlu, Ferhat Hanife, Suleyman Ozcelik, Semsettin Altindal, Gholamreza Pirgholi-Givi
Summary: The temperature-dependent dielectric properties of the Au/ZnO-PVA/n-Si structure were studied using capacitance-voltage (C-V) and conductance-voltage (G/ro-V) experiments. The results showed that all electrical and dielectric variables in these structures strongly depend on temperature. The use of ZnO-PVA nanocomposite as an interlayer resulted in changes to these parameters. The presence of series resistance caused an increase in the values of capacitance and conductance as the temperature increased. The activation energy value obtained from the conduction procedure's contribution to the boundary grains was found to be 0.04 eV, indicating a moderate amount.
PHYSICA B-CONDENSED MATTER
(2023)
Article
Materials Science, Multidisciplinary
Murat Ulusoy, Yosef Badali, Gholamreza Pirgholi-Givi, Yashar Azizian-Kalandaragh, Semsettin Altindal
Summary: The electrical behaviors of Schottky structures with a RuO2-doped PVC interface were studied over a wide frequency range and voltages. The effects on the structure's capacitance/conductance and surface state intensity were discussed. Significant increases in capacitance and conductance values were observed in the depletion zone. The series resistance decreased with increasing frequency and the distribution of surface state intensity varied with voltage and frequency.