期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 47, 期 6, 页码 3091-3098出版社
SPRINGER
DOI: 10.1007/s11664-017-5913-y
关键词
High pressure; high temperature annealing; thermoelectric materials; microstructure
资金
- Center for Sustainability Science, Academia Sinica [AS-106-SS-A01]
A series of Sn added TiS2 (TiS2:Sn (x) ; x = 0, 0.05, 0.075 and 0.1) were prepared by solid state synthesis with subsequent annealing. The Sn atoms interacted with sulfur atoms in TiS2 and formed a trace amount of misfit layer (SnS)(1+m)(TiS2-delta)(n) compound with sulfur deficiency. A significant reduction in electrical resistivity with moderate decrease in the Seebeck coefficient was observed in Sn added TiS2. Hence, a maximum power factor of 1.71 mW/m-K-2 at 373 K was obtained in TiS2:Sn-0.05. In addition, the thermal conductivity was decreased with Sn addition and reached a minimum value of 2.11 W/m-K at 623 K in TiS2:Sn-0.075, due to the impurity phase (misfit phase) and defects (excess Ti) scattering. The zT values increased from 0.08 in pristine TiS2 to an optimized value of 0.46 K at 623 K in TiS2:Sn-0.05.
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