Numerical analysis of dislocation density and residual stress in a GaN single crystal during the cooling process

出版年份 2017 全文链接

标题

作者

关键词

A1. Computer simulation, A1. Line defects, A1. Substrates, B2. Semiconducting III-V materials

出版物

JOURNAL OF CRYSTAL GROWTH

Volume 468, Issue -, Pages 839-844

出版商

Elsevier BV

发表日期

2017-02-07

DOI

10.1016/j.jcrysgro.2017.01.034

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