Determination of partial dislocations of stacking fault in (111) single crystal diamond grown on (111) seed crystal by synchrotron X-ray topography

标题
Determination of partial dislocations of stacking fault in (111) single crystal diamond grown on (111) seed crystal by synchrotron X-ray topography
作者
关键词
X-ray topography, Defect, Single crystal growth, Diamond
出版物
JOURNAL OF CRYSTAL GROWTH
Volume 468, Issue -, Pages 439-442
出版商
Elsevier BV
发表日期
2016-11-24
DOI
10.1016/j.jcrysgro.2016.11.094

向作者/读者发起求助以获取更多资源

Reprint

联系作者

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More