Ultrasensitive all-solution-processed field-effect transistor based perovskite photodetectors with sol-gel SiO 2 as the dielectric layer

标题
Ultrasensitive all-solution-processed field-effect transistor based perovskite photodetectors with sol-gel SiO 2 as the dielectric layer
作者
关键词
Perovskite photodetector, All-solution-processed, Field-effect transistor, Sol-gel SiO, 2, layer, Specific detectivity
出版物
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 717, Issue -, Pages 150-155
出版商
Elsevier BV
发表日期
2017-05-11
DOI
10.1016/j.jallcom.2017.05.082

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