Effects of substrate temperature on resistive switching behavior of planar ZnO resistive random access memories

标题
Effects of substrate temperature on resistive switching behavior of planar ZnO resistive random access memories
作者
关键词
Semiconductor device, Resistive memory, Oxide semiconductor material
出版物
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 691, Issue -, Pages 537-544
出版商
Elsevier BV
发表日期
2016-08-31
DOI
10.1016/j.jallcom.2016.08.248

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