Formation of Vzn-No acceptors with the assistance of tellurium in nitrogen-doped ZnO films

We report the formation of Vzn-No complex shallow acceptors in ZnO films. Through tellurium and nitrogen co-doping under O-rich growth condition, a Tezn-No complex can be stably formed. A proper 0 rich post-annealing process can make tellurium out of the films, and finally results in the formation of Vzn-No complex. This process has been evidenced by a set of characterization methods. Utilizing this approach, hole majority has been realized for a large windows of nitrogen concentration. Therefore, this study may help to advance the investigation on the p-type bottleneck of ZnO material. (C) 2016 Elsevier B.V. All rights reserved.