Use of self-assembled monolayers for selective metal removal and ultrathin gate dielectrics in MoS2 field-effect transistors

标题
Use of self-assembled monolayers for selective metal removal and ultrathin gate dielectrics in MoS2 field-effect transistors
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 56, Issue 4S, Pages 04CP10
出版商
Japan Society of Applied Physics
发表日期
2017-03-28
DOI
10.7567/jjap.56.04cp10

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