Preparation of 2-in.-diameter (001) β-Ga2O3 homoepitaxial wafers by halide vapor phase epitaxy

The homoepitaxial growth of thick beta-Ga2O3 layers on 2-in.-diameter (001) wafers was demonstrated by halide vapor phase epitaxy. Growth rates of 3 to 4 mu m/h were confirmed for growing intentionally Si-doped n-type layers. A homoepitaxial layer with an average thickness and carrier concentration of 10.9 mu m and 2.7 x 10(16) cm(-3) showed standard deviations of 1.8 mu m (16.5%) and 0.5 x 10(16) cm(-3) (19.7%), respectively. Ni Schottky barrier diodes fabricated directly on a 5.3-mu m-thick homoepitaxial layer with a carrier concentration of 3.4 x 10(16) cm(-3) showed reasonable reverse and forward characteristics, i.e., breakdown voltages above 200V and on-resistances of 3.8-7.7 m Omega cm(2) at room temperature. (C) 2017 The Japan Society of Applied Physics