A 2D Potential Based Threshold Voltage Model Analysis and Comparison of Junctionless Symmetric Double Gate Vertical Slit Field Effect Transistor

标题
A 2D Potential Based Threshold Voltage Model Analysis and Comparison of Junctionless Symmetric Double Gate Vertical Slit Field Effect Transistor
作者
关键词
-
出版物
IETE JOURNAL OF RESEARCH
Volume 63, Issue 4, Pages 451-460
出版商
Informa UK Limited
发表日期
2017-03-07
DOI
10.1080/03772063.2017.1292154

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