High performance solution-deposited bilayer channel indium–zinc-oxide thin film transistors by low-temperature microwave annealing

标题
High performance solution-deposited bilayer channel indium–zinc-oxide thin film transistors by low-temperature microwave annealing
作者
关键词
Solution-process, IZO, Bilayer channel, Microwave irradiation, Post-deposition anneal
出版物
CURRENT APPLIED PHYSICS
Volume 15, Issue -, Pages S69-S74
出版商
Elsevier BV
发表日期
2015-05-03
DOI
10.1016/j.cap.2015.04.038

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