Phonon Mean Free Path in Few Layer Graphene, Hexagonal Boron Nitride, and Composite Bilayer h-BN/Graphene

标题
Phonon Mean Free Path in Few Layer Graphene, Hexagonal Boron Nitride, and Composite Bilayer h-BN/Graphene
作者
关键词
-
出版物
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 16, Issue 5, Pages 752-758
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2017-02-21
DOI
10.1109/tnano.2017.2672199

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