Article
Chemistry, Physical
Yuhang Guan, Yuqing Zhang, Jinxiong Li, Jiye Li, Yuhan Zhang, Zhenhui Wang, Yuancan Ding, Mansun Chan, Xinwei Wang, Lei Lu, Shengdong Zhang
Summary: In recent years, high-k gate dielectrics have received increasing attention in amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) due to the need for stronger gate controllability. This study developed an ultra-thin top-gate insulator of atomic-layer-deposited (ALD) HfOx for amorphous indium-gallium-zinc oxide (a-IGZO) TFTs. However, the reliability of the 4-nm HfOx-gated a-IGZO transistor is poor due to interface defects caused by the interface reaction between HfOx and a-IGZO during the ALD process. To improve stability, the a-IGZO channel is pre-treated with strong oxidizing plasma. However, further reducing HfOx thickness increases gate leakage current.
APPLIED SURFACE SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Jusin Lee, Min Jae Kim, Heewon Yang, Sunjin Kim, Seongoh Yeom, Gunwoo Ryu, Yoonsoo Shin, Onejae Sul, Jae Kyeong Jeong, Seung-Beck Lee
Summary: In this study, a stable and sensitive biochemical sensor based on amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with a versatile extended-gate electrode was reported. The sensor demonstrated high sensitivity and specificity for protein detection, and could be potentially used for future multifunctional biomolecular sensing and analysis.
IEEE SENSORS JOURNAL
(2021)
Article
Engineering, Electrical & Electronic
Kazushige Takechi, Feipeng Lin, Shui He, Yong Yuan, Jun Tanaka, Kenji Sera
Summary: In this study, top-gate InGaZnO thin-film transistors with boron implantation in the source-drain regions were discussed, focusing on channel shortening. It was found that boron implantation induced channel shortening in InGaZnO TFTs, but optimizing the acceleration voltage in the implantation process could suppress this effect, leading to good operation in short-channel InGaZnO TFTs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Xiaoliang Zhou, Yunkai Cao, Jiye Li, Huan Yang, Wengao Pan, Lei Lu, Shengdong Zhang
Summary: This study investigates the direct-current reactive sputtering of aluminum oxide films as a preferable passivation layer for self-aligned top-gate amorphous metal oxide semiconductor thin-film transistors. The grown AlOx films exhibit excellent electrical characteristics and, when combined with a PECVD SiO2 interlayer, provide trustworthy environmental and electrical stability for SATG a-IGZO TFTs.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Nanoscience & Nanotechnology
Katie Stallings, Jeremy Smith, Yao Chen, Li Zeng, Binghao Wang, Gabriele Di Carlo, Michael J. Bedzyk, Antonio Facchetti, Tobin J. Marks
Summary: Metal oxide semiconductors, such as a-IGZO, have shown impressive progress as alternatives to amorphous silicon in electronics applications, but require compatible unconventional gate dielectric materials. Solution-processable self-assembled nanodielectrics (SANDs) composed of alternating organic and inorganic oxide layers offer high capacitances and low processing temperatures, yet have not been implemented in the top-gate TFT architecture.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Engineering, Electrical & Electronic
Tianyuan Song, Dongli Zhang, Mingxiang Wang
Summary: The study demonstrates that annealing at 400 degrees C in O-2 atmosphere can effectively reduce trap states in the a-IGZO channel, improving the stability of TFTs.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Yining Yu, Nannan Lv, Dongli Zhang, Yiran Wei, Mingxiang Wang
Summary: The letter discusses how the carrier mobility of amorphous InGaZnO thin-film transistors was enhanced by introducing nitrogen and forming Zn3N2, with a saturation field-effect mobility of 61.6 cm(2)/Vs. However, annealing at 400 degrees C led to a decrease in mobility to 4.1 cm(2)/Vs due to the formation of defective ZnxNy. Additionally, the enhanced mobility of a-IGZO TFTs did not exhibit persistent photoconductivity behavior, making them suitable for functional circuits in active-matrix displays.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Chemistry, Physical
Md Mehedi Hasan, Samiran Roy, Eisuke Tokumitsu, Hye-Yong Chu, Sung Chul Kim, Jin Jang
Summary: By employing one-step annealing, we successfully induced ferroelectricity in spray coated ZrO2 with sputtered amorphous InGaZnO (a-IGZO) capping layer, achieving a large memory window of 1.5 V, high I-ON/I-OFF ratio of 1 x 10(7), and steep subthreshold swing (SS) of 0.12 V/decade. The low thermal expansion coefficient of a-IGZO helped induce the polar orthorhombic phase in the underlying ZrO2 layer by providing suitable mechanical stress. This work provides a new approach for inducing ferroelectricity in ZrO2 for high performance ferroelectric thin film transistors.
APPLIED SURFACE SCIENCE
(2023)
Article
Materials Science, Multidisciplinary
Jinbaek Bae, Arqum Ali, Jin Jang
Summary: Spray-pyrolyzed amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) with self-aligned (SA) coplanar structure exhibits excellent performance and stability, making it a promising metal oxide semiconductor for high-performance TFT backplanes.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Engineering, Electrical & Electronic
Sunaina Priyadarshi, Mohammad Masum Billah, Hyunho Kim, Md. Hasnat Rabbi, Sadia Sayed Urmi, Suhui Lee, Jin Jang
Summary: This study reports a dual-gate (DG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with a top-gate (TG) drain offset structure. The TFT demonstrates a high on/off current ratio, subthreshold swing, and field-effect mobility, and exhibits stable performance.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Maruti B. Zalte, Virendra Kumar, Sandeep G. Surya, Maryam Shojaei Baghini
Summary: Metal oxide semiconductors, particularly solution-processed amorphous Indium-Gallium-Zinc-Oxide (IGZO) transistors, were studied for their feasibility in radiation sensing and the effects of gamma radiation on their performance. The changes induced by radiation in the IGZO thin-film transistors were mainly observed in threshold voltage shift and subthreshold swing. The sensitivity obtained with gamma irradiation was 27.78mV/Gy, and the radiation-induced changes in TFTs were found to be completely removed after storing irradiated TFTs in vacuum for 6 months.
IEEE SENSORS JOURNAL
(2021)
Article
Engineering, Electrical & Electronic
C. Zhang, D. Li, P. T. Lai, X. D. Huang
Summary: The study shows that post-metallization annealing treatment significantly influences the performance of dual-gate InGaZnO thin-film transistors, where the TiOx formed suppresses the effects of the top gate but also acts as detrimental deep-level acceptor-like traps. The untreated transistors showed good performance due to the suppression of TiOx and metal-hydroxyl traps.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Tae Jun Yang, Jingyu Park, Sungju Choi, Changwook Kim, Moonsup Han, Jong-Ho Bae, Sung-Jin Choi, Dong Myong Kim, Hong Jae Shin, Yun Sik Jeong, Jong Uk Bae, Chang Ho Oh, Dong-Wook Park, Dae Hwan Kim
Summary: In this study, the threshold voltage shift in self-aligned top-gate amorphous InGaZnO thin-film transistors under various current stress conditions was quantitatively studied. A stretched-exponential function-based model was proposed, which showed that the electron trapping time constant was inversely proportional to the difference between the gate-source voltage and the threshold voltage, and the time constant was directly proportional to the square root of the sum of the drain-source voltage and the built-in voltage, potentially due to the lateral electric field-induced local donor creation near the drain. The proposed model was experimentally verified and it was confirmed that the lateral electric field dominantly influenced donor creation near the drain.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Chang Liu, Houyun Qin, Yiming Liu, Song Wei, Hongbo Wang, Yi Zhao
Summary: The InGaZnO thin film transistor with organosilicon passivation layer (PVL) showed improved performance with high mobility, low subthreshold swing, good threshold voltage, and I-on/I-off ratio. The PVL also reduced threshold voltage shift under positive and negative bias stress conditions.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Nanoscience & Nanotechnology
Jiye Li, Yuhang Guan, Jinxiong Li, Yuqing Zhang, Yuhan Zhang, ManSun Chan, Xinwei Wang, Lei Lu, Shengdong Zhang
Summary: To enhance the downscaling potential of top-gate amorphous oxide semiconductor (AOS) thin-film transistors (TFTs), we implemented the ultra-thin gate insulator (GI) using atomic-layer-deposited (ALD) AlOx and HfOx. Both high-k GIs demonstrated good insulation properties even with a physical thickness of 4 nm. However, the HfOx-gated TFT showed higher gate leakage current and poorer subthreshold slope due to the small band offset and defective interface between a-IGZO and HfOx. The imperfect a-IGZO/HfOx interface also caused noticeable positive bias stress instability.
Article
Physics, Applied
Kazushige Takechi, Shinnosuke Iwamatsu, Shunsuke Konno, Toru Yahagi, Yutaka Abe, Mutsuto Katoh, Hiroshi Tanabe
JAPANESE JOURNAL OF APPLIED PHYSICS
(2015)
Article
Materials Science, Multidisciplinary
Jun Tanaka, Yoshihiro Ueoka, Koji Yoshitsugu, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka, Kazushige Takechi, Hiroshi Tanabe
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2015)
Article
Physics, Applied
Kazushige Takechi, Hiroshi Tanabe
JAPANESE JOURNAL OF APPLIED PHYSICS
(2016)
Article
Engineering, Electrical & Electronic
Kunihiro Shiota, Mamoru Okamoto, Hiroshi Tanabe
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY
(2017)
Article
Engineering, Electrical & Electronic
Kazushige Takechi, Shinnosuke Iwamatsu, Yutaka Murakami, Toru Yahagi, Yutaka Abe, Mutsuto Katoh, Hiroshi Tanabe
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2018)
Article
Physics, Applied
Kazushige Takechi, Shinnosuke Iwamatsu, Toru Yahagi, Yoshiyuki Watanabe, Seiya Kobayashi, Hiroshi Tanabe
JAPANESE JOURNAL OF APPLIED PHYSICS
(2012)
Article
Physics, Applied
Shinnosuke Iwamatsu, Kazushige Takechi, Toru Yahagi, Yoshiyuki Watanabe, Hiroshi Tanabe, Seiya Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS
(2013)
Article
Physics, Applied
Kazushige Takechi, Shinnosuke Iwamatsu, Toru Yahagi, Yutaka Abe, Seiya Kobayashi, Hiroshi Tanabe
JAPANESE JOURNAL OF APPLIED PHYSICS
(2014)
Article
Materials Science, Multidisciplinary
Kazushige Takechi, Shinnosuke Iwamatsu, Toru Yahagi, Yutaka Abe, Seiya Kobayashi, Hiroshi Tanabe
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2014)
Article
Physics, Applied
Takanori Takahashi, Ryoko Miyanaga, Mami N. Fujii, Jun Tanaka, Kazushige Takechi, Hiroshi Tanabe, Juan Paolo Bermundo, Yasuaki Ishikawa, Yukiharu Uraoka
APPLIED PHYSICS EXPRESS
(2019)
Article
Engineering, Electrical & Electronic
Yuya Kuwahara, Kazushige Takechi, Jun Tanaka, Hiroshi Tanabe
IEEE ELECTRON DEVICE LETTERS
(2019)
Article
Physics, Applied
H Tanabe, CM Chen, HA Atwater
APPLIED PHYSICS LETTERS
(2000)
Article
Materials Science, Multidisciplinary
RA Puglisi, H Tanabe, CM Chen, HA Atwater
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
(2000)
