Channel Mobility in GaN Hybrid MOS-HEMT Using SiO2 as Gate Insulator

标题
Channel Mobility in GaN Hybrid MOS-HEMT Using SiO2 as Gate Insulator
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 7, Pages 2893-2899
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2017-05-16
DOI
10.1109/ted.2017.2699786

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