Article
Crystallography
Zhihua Zhu, Zhaonian Yang, Xiaomei Fan, Yingtao Zhang, Juin Jei Liou, Wenbing Fan
Summary: The tunnel field-effect transistor (TFET) is a potential candidate for ESD protection in a whole-chip, with the Ge-source TFET offering lower trigger voltage and higher failure current compared to traditional TFETs, but also showing vulnerability due to low thermal instability. By selecting the proper germanium mole fraction, the discharge ability and thermal failure risk can be balanced to enhance whole-chip ESD robustness.
Article
Computer Science, Information Systems
You Wang, Yu Mao, Qizheng Ji, Ming Yang, Zhaonian Yang, Hai Lin
Summary: Gate-grounded tunnel field effect transistors (ggTFETs) are considered as essential ESD protection devices in TFET-integrated circuits. A SiGe Source/Drain PNN (P+N+N+) TFET was proposed to improve trigger voltage and failure current compared to Conventional TFETs, with optimizations made based on simulation results.
Article
Engineering, Electrical & Electronic
Alireza Aghanejad Ahmadchally, Morteza Gholipour
Summary: In this simulation-based study, an n-type six-dimer-line armchair graphene nanoribbon (6-AGNR) tunnel field-effect transistor with asymmetric reservoir doping density was investigated. The results show that for the device with a 5-nm channel length and a supply voltage of 0.4 V, it exhibited a high I-ON/I-OFF ratio and a low subthreshold swing.
JOURNAL OF COMPUTATIONAL ELECTRONICS
(2021)
Review
Chemistry, Physical
P. Hannah Blessy, A. Shenbagavalli, T. S. Arun Samuel
Summary: This study discusses the advantages of the 3 nm TFET structure in low-power applications and the importance of overcoming the limitations of CMOS transistors.
Article
Engineering, Electrical & Electronic
Zhaonian Yang, Jinghao Xu, Shi Pu, Panqi Gao, Yue Zhang, Yuan Yang, Yan Zhang
Summary: In this article, a TFET-triggered SCR device is proposed, which enables early carrier's transportation through the reverse-biased junction. The applications of this device in ESD protection are explored and its electrical characteristics are investigated. TCAD simulation verifies the principle of the device design and shows its advantages over the prevalent diode-triggered SCR.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Karabi Baruah, Srimanta Baishya
Summary: A comprehensive study on the dielectrically modulated Ge-source short double-gate PNPN tunnel field-effect transistor (SG-PNPN TFET) based label-free biosensor is conducted. The short gates and counter-doped pockets in the SG-PNPN TFET architecture enhance band-to-band tunneling, thereby increasing the device's drain current sensitivity. By creating a nanocavity between the gate and SiO2 layer on the source side, the sensor's performance is evaluated in terms of dielectric constant and charge density of biomolecules. The proposed SG-PNPN TFET biosensor exhibits superior sensitivity compared to other FET-based biosensors, making it suitable for low-power biosensing.
MICROELECTRONICS JOURNAL
(2023)
Article
Engineering, Electrical & Electronic
Been Kwak, Hyunwoo Kim, Daewoong Kwon
Summary: In the era of big data, the von Neumann architecture faces challenges in terms of energy consumption and latency for data transfer. Ternary content addressable memories (TCAMs) provide a solution with fast and energy-efficient operation by performing parallel searches. This study introduces a single transistor (1T) ferroelectric-gate tunnel FET (FeTFET) for TCAM operations, which demonstrates its functionality through TCAD simulations. The FeTFET has intrinsic directional currents and its transfer curve can be shifted based on the polarization state of the ferroelectric material, enabling stable search operations for stored logic states and potentially allowing for increased storage and search capabilities compared to conventional TCAM cells.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2023)
Article
Engineering, Electrical & Electronic
Abhinav Gupta, Sneh Saurabh
Summary: This article proposes a standard ternary inverter based on a dual-pocket tunnel FET for low-power applications, demonstrating that appropriate doping concentration and length choices can result in three stable output voltage levels. The ternary inverter characteristics are achieved through two tunneling mechanisms in the device, allowing for operation at different supply voltages by controlling the pocket doping concentration.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Physical
Arya Dutt, Sanjana Tiwari, Abhishek Kumar Upadhyay, Ribu Mathew, Ankur Beohar
Summary: This paper presents the design and analysis of a novel GAA cylindrical TFET using TCAD tool. The device incorporates DU and HBS to minimize SCEs and suppress I-OFF. The performance of the TFET is evaluated through the analysis of various analog/RF parameters.
Article
Engineering, Electrical & Electronic
Sufen Wei, Guohe Zhang, Li Geng, Zhibiao Shao, Cheng-Fu Yang
Summary: This paper presents two novel silicon-on-insulator tunnel field-effect transistors (SOI-TFETs), a lateral dual-gate TFET and a lateral triple-gate TFET, which demonstrate higher on-state current and lower off-state current due to the modulation effect of multiple gate voltages on the channel barrier. Comparison reveals that the lateral triple-gate TFET outperforms the dual-gate TFET in terms of on-state current and off-state current.
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS
(2021)
Article
Physics, Condensed Matter
Garima Jain, Ravinder Singh Sawhney, Ravinder Kumar, Girish Wadhwa
Summary: An analytical model of dual material single gate doping-less Tunnel FET (DM-GU-TFET) with gate underlap regions has been proposed and validated using TCAD simulation. The study examines the potential of gate underlap area with channel area and proposes an explanatory estimate strategy to settle the Poisson equations at different limit conditions. It is found that structural variations such as gate underlap length and tunneling length have an impact on the electrical characteristics of DM-GU-TFET.
SUPERLATTICES AND MICROSTRUCTURES
(2021)
Article
Engineering, Electrical & Electronic
Hyun Woo Kim, Daewoong Kwon
Summary: The L-shaped tunnel FET introduced in this work, engineered with pocket doping, demonstrates improved performance by suppressing corner tunneling and enhancing on/off transition. Through optimized pocket doping concentration, the subthreshold swing is reduced and the on-current is significantly increased compared to conventional L-shaped TFETs, even in devices with extremely scaled gate length.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2021)
Article
Engineering, Electrical & Electronic
Mohammad K. Anvarifard, Ali A. Orouji
Summary: The study successfully adjusted the energy band of a novel Si0.7Ge0.3 source TFET, improving its performance for potential application in both analog and digital applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Km Sucheta Singh, Satyendra Kumar, Kaushal Nigam
Summary: This study investigates the applicability of DMGOSDG-TFET as a biosensing element and introduces new methods for implementing a biosensor based on DMGOSDG-TFET. The research shows that DMGOSDG-TFET has potential sensitivity and performance for biosensing applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Physical
Omdarshan Paul, Chithraja Rajan, Dip Prakash Samajdar, Tarek Hidouri, Samia Nasr
Summary: This paper presents the design of a TFET with a ferroelectric gate oxide and hetero material source/drain-channel for biosensor applications. By improving the DC characteristics of TFET, the biosensor's performance is enhanced. The incorporation of negative capacitance effect and band-to-band tunneling probability in TFET biosensors leads to improved sensitivity, speed, and reduced power consumption.
