Article
Engineering, Electrical & Electronic
Isao Takayanagi, Rihito Kuroda
Summary: This article discusses HDR CMOS image sensor technology and its automotive applications, including application requirements, basic approaches, technological trends, advantages and disadvantages, and future prospects. It also introduces the issues and new technologies in automotive applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Chemistry, Analytical
Gil Cherniak, Jonathan Nemirovsky, Amikam Nemirovsky, Yael Nemirovsky
Summary: This article presents a stochastic model for the conversion gain of Active Pixel Complementary metal-oxide-semiconductor (CMOS) image sensors under stationary conditions. The study extends the model to non-stationary conditions, specifically in gated imaging applications. The new stochastic model based on fundamental physical considerations provides new insights into gated CMOS imaging and allows for optimized performance through simulated Signal-to-Noise Ratio (SNR). The determination of conversion gain should still be done under stationary conditions.
Article
Computer Science, Information Systems
Yanfei Lin, Zhiwen Liu, Xiaorong Gao
Summary: This study investigates the sensitivity of the N400 effect in semantic processing under different sensory modalities. The results show that audio-cognition is better than visual-cognition at high signal-to-noise ratio (SNR), while visual-cognition is better than audio-cognition at low SNR.
TSINGHUA SCIENCE AND TECHNOLOGY
(2022)
Article
Engineering, Electrical & Electronic
Fan Liu, Xing-Fei Li, Gan-Min Xia
Summary: The study presents small-signal and noise models, along with design parameters, for the development of low-noise preamplifiers for specific sensors. The proposed models were validated through simulation and experimental results, demonstrating the noise voltage levels under specific conditions.
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
(2021)
Article
Engineering, Electrical & Electronic
Haewon Lee, Ilgu Yun
Summary: This article presents a comprehensive study on the pixel shrinkage in the mobile industry, focusing on the use of tunneling field effect transistor (TFET) as a pixel source follower (SF). The analysis shows that TFET SF has superior SF gain value and linearity compared to the conventional NMOS SF. The TFET SF also offers better immunity to side effects caused by channel shortening and more uniform characteristics in process variations, resulting in low pixel-to-pixel output variation. This study suggests the use of TFET SF for high resolution and reduced device variation in mobile CMOS image sensor (CIS) applications.
IEEE SENSORS JOURNAL
(2023)
Article
Geochemistry & Geophysics
Tianqi Shi, Xin Ma, Ge Han, Zhipeng Pei, Hao Xu, Haowei Zhang, Wei Gong
Summary: In this study, we propose a method to improve the accuracy and precision of CO2 concentration profiles measurements in DIAL. This method combines conditional adjustment with Chebyshev fitting to reduce the error of the retrieved results in the atmospheric boundary layer with a high signal-to-noise ratio. Simulation experiments and real case examinations demonstrate the effectiveness and applicability of our method.
IEEE GEOSCIENCE AND REMOTE SENSING LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Yasuyuki Fujihara, Maasa Murata, Shota Nakayama, Rihito Kuroda, Shigetoshi Sugawa
Summary: This article presents a prototype linear response CMOS image sensor with two-stage LOFIC, achieving a dynamic range of over 120 dB and a maximum SNR of 70 dB. The proposed two-stage LOFIC ensures an SNR over 35 dB at all switching points.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
O. Marcelot, A. Panglosse, P. Martin-Gonthier, V Goiffon
Summary: A simple calibration method is proposed for TCAD simulation at cryogenic temperature, focusing on image sensor application. The method uses measurements and simulations of sheet resistances for TCAD calibration and is experimentally verified by extracting pinning voltages on JFETs and a pixel with a pinned photodiode (PPD).
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Chemistry, Analytical
Wonjun Shin, Daehee Kwon, Minjeong Ryu, Joowon Kwon, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Jinwoo Park, Donghee Kim, Jong-Ho Lee
Summary: The research found that as the thickness of the IGZO film increases, the dominant sensing area transitions from the surface to the bulk, the resistor-type gas sensor has lower noise and higher SNR, and the response of the FET-type gas sensor depends on film porosity, with no dependence on noise characteristics.
SENSORS AND ACTUATORS B-CHEMICAL
(2021)
Article
Geography, Physical
Przemyslaw Kuras, Lukasz Ortyl, Tomasz Owerko
Summary: Ground-based radar interferometry is capable of observing displacements of engineering structures and natural objects, with experiments confirming the accuracy of manufacturer-declared error values and proposing a model to estimate the accuracy of displacement measurements in the field reliably based on SNR values and distance to the object.
ISPRS JOURNAL OF PHOTOGRAMMETRY AND REMOTE SENSING
(2022)
Article
Engineering, Electrical & Electronic
Wonjun Shin, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Jinwoo Park, Donghee Kim, Byung-Gook Park, Jong-Ho Lee
Summary: This study investigates the effects of channel length (L) scaling on the signal-to-noise ratio (SNR) of FET-type gas sensors with a horizontal floating-gate. It is found that SNR is proportional to the square root of the channel length (L) of the FET transducer. The low-frequency noise characteristics of the FET-type gas sensor can be explained by the carrier number fluctuation model with correlated mobility fluctuation, providing important guidelines for designing sensor platforms in FET-type gas sensors.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Computer Science, Information Systems
Qinping Feng, Shuping Tao, Chunyu Liu, Hongsong Qu
Summary: This paper introduces an improved Fourier-Mellin transform (FMT)-based registration method for registration-based time-delayed integration (TDI) in airborne cameras, with a special filter called WCSDF designed to reduce noise interference. The proposed method shows significant improvement in noise robustness, with low computational complexity for hardware implementation, and generates TDI images of higher quality in various metrics.
Article
Engineering, Electrical & Electronic
Yue Xu, Bing Wang, Xingxing Hu, Lei Jiang
Summary: This paper presents a monolithic integrated front-end CMOS Hall sensor microsystem for linear magnetic field measurement. By optimizing the geometry of the Hall plates and employing a four-phase spinning current method, the system achieves high current sensitivity and signal-to-noise ratio (SNR). Experimental results demonstrate that an optimal performance is achieved when the length-to-width (L/W) ratio of the Hall plate is 0.4.
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
(2022)
Article
Engineering, Electrical & Electronic
Chang Sheng Lee, Minghui Li, Yaolong Lou, Ravinder Dahiya
Summary: This article proposes a hybrid technique combining wavelet-based total variation (WATV) and empirical Wiener denoising method to enhance the signal-to-noise ratio (SNR) of lung sound signals. The technique takes into account both significant and insignificant wavelet coefficients of the noisy signal, resulting in improved SNR compared to state-of-the-art filters. The proposed method achieves an improvement of 3-20 dB in SNR, and is less sensitive to the variation of SNR values. The technique also shows similar SNR performance for different types of lung sound signals in simulation and experimental studies.
IEEE SENSORS JOURNAL
(2022)
Article
Chemistry, Analytical
Wonjun Shin, Yujeong Jeong, Seongbin Hong, Gyuweon Jung, Jinwoo Park, Donghee Kim, Byung-Gook Park, Jong-Ho Lee
Summary: This study proposes a novel gas sensing amplifier circuit composed of resistor-and FET-type gas sensors. The amplifier circuit utilizes Indium-gallium-zinc oxide (IGZO) as a sensing material for detecting hydrogen sulfide (H2S) gas. The low-frequency noise characteristics of the sensors are analyzed, and the signal-to-noise ratio and limit of detection of the amplifier circuit are determined. This methodology can contribute to the advancement of integrated gas sensing systems.
SENSORS AND ACTUATORS B-CHEMICAL
(2022)
Article
Engineering, Electrical & Electronic
Calvin Yi-Ping Chao, Meng-Hsu Wu, Shang-Fu Yeh, Chin-Hao Chang, Chi-Lin Lee, Chin Yin, Kuo-Yu Chou, Honyih Tu
Summary: This study used a charge integration method to characterize the random telegraph noises (RTN) of MOSFET subthreshold currents, finding that each RTN trap was active only within a specific range of gate voltages, and different sets of RTN traps were observed under different gate voltages.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2021)