Bistable Capacitance Performance-Induced Ambipolar Charge Injected Based on Ba0.6Sr0.4TiO3 by an Inlaid Zr–Hf–O Layer for Novel Nonvolatile Memory Application
Bistable Capacitance Performance-Induced Ambipolar Charge Injected Based on Ba0.6Sr0.4TiO3 by an Inlaid Zr–Hf–O Layer for Novel Nonvolatile Memory Application
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