Article
Chemistry, Physical
E. B. Yakimov, A. Y. Polyakov, I. V. Shchemerov, N. B. Smirnov, A. A. Vasilev, A. I. Kochkova, P. S. Vergeles, E. E. Yakimov, A. V. Chernykh, Minghan Xian, F. Ren, S. J. Pearton
Summary: Lightly n-type doped Ga2O3 layers grown by Halide Vapor Phase Epitaxy (HVPE) on bulk n(+)-Ga2O3 substrates were treated with fast reactor neutrons, 20 MeV protons, or high ion density Ar plasma, leading to an increase in deep acceptors concentration. This resulted in a significant enhancement of photocurrent and EBIC current collection efficiency in Schottky diodes on the layers, potentially improving the photosensitivity of Ga2O3-based solar-blind photodetectors.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Optics
Yuhang Li, Yushen Liu, Guofeng Yang, Baoan Bian, Jin Wang, Yan Gu, Qigao Fan, Yu Ding, Xiumei Zhang, Naiyan Lu, Guoqing Chen
Summary: A metal electrode modification process has been introduced for AlGaN-based MSM photodetectors to enhance the response of solar-blind UV light detection. The modification significantly increases the photocurrent and responsivity of the device by reducing the work function of the metal electrode and changing the height of the Schottky barrier. Moreover, adverse effects caused by surface state and polarization of AlGaN materials are effectively reduced, benefiting the improvement of electrical performances of III-nitride-based UV photodetectors.
Article
Nanoscience & Nanotechnology
Suman Kundu, Subi J. George, Giridhar U. Kulkarni
Summary: A high-performance visible-blind UV photodetector using 1D supramolecular nanofibers is reported, exhibiting high responsivity, selectivity, low power consumption, and good mechanical flexibility. The device performance is improved through tweaking electronic and ionic conduction pathways and optimizing electrode material, external humidity, applied voltage bias, and introducing additional ions. The nanofiber system shows great potential for integration in future electronic gadgets.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Materials Science, Multidisciplinary
Jiaheng Han, Caichi Liu, Yangyang Zhang, Yan Guan, Xian Zhang, Wenjin Yu, Zhenyu Tang, Yuchao Liang, Cuncun Wu, Shijian Zheng, Lixin Xiao
Summary: The performance of perovskite photodetectors was studied in this work, and it was found that devices made with quasi-2D perovskite materials performed better. Compared to conventional 3D perovskite materials, quasi-2D perovskite materials had lower defect density and higher resistance, which improved the performance of the photodetectors.
ADVANCED OPTICAL MATERIALS
(2022)
Review
Chemistry, Analytical
Antoni Rogalski, Zbigniew Bielecki, Janusz Mikolajczyk, Jacek Wojtas
Summary: The paper presents the long-term evolution and recent development of ultraviolet photodetectors, covering different types of detectors and their advancements. Attention is given to wide band gap semiconductor photodetectors, including AlGaN, SiC-based, and diamond detectors, as well as Ga2O3 as a promising material. New UV photodetector concepts based on low-dimensional solid materials are also discussed, highlighting improvements in performance.
Article
Engineering, Electrical & Electronic
Xiao-Xi Li, Guang Zeng, Yu-Chun Li, Hao Zhang, Zhi-Gang Ji, Ying-Guo Yang, Man Luo, Wei-Da Hu, David Wei Zhang, Hong-Liang Lu
Summary: This article presents a high responsivity and fully flexible Ta-doped beta-Ga2O3 DUV phototransistor with outstanding optoelectrical properties and mechanical flexibility, showing potential applications in UV imaging and artificial intelligence.
NPJ FLEXIBLE ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Yan Gu, Feng Xie, Qigao Fan, Xuecheng Jiang, Jiarui Guo, Zhijian Xie, Qi Zhang, Xiumei Zhang, Guoqing Chen, Guofeng Yang
Summary: Fabrication and comprehensive characterizations of Al0.18Ga0.82N/GaN 2DEG-based UV PD with symmetrical interdigitated structure are reported. The device exhibits a responsivity of 800 A/W, EQE of 3.33 x 10(5)%, and a dark current of 3 x 10(-8) A. Transient response characteristic is improved with a rise time of 25 ms and a fall time of 21 ms. The 2DEG-based UV PD demonstrates a broadband nature with a response spectrum from 300 to 360 nm and a cutoff wavelength of 365 nm.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Yu-Song Zhi, Zeng Liu, Shao-Hui Zhang, Shan Li, Zu-Yong Yan, Pei-Gang Li, Wei-Hua Tang
Summary: This article describes a 16 x 4 linear array of beta-Ga2O3-based metal-semiconductor-metal photodetector for solar-blind sensing at 254 nm wavelength. The beta-Ga2O3 film is grown using MOCVD equipment, and the photodetectors are constructed with standard processes. The photodetectors exhibit excellent performance with key parameters like photo responsivity and detectivity.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Inorganic & Nuclear
Qiuyan Yue, Lin Wang, Huacheng Fan, Ying Zhao, Cong Wei, Chengjie Pei, Qingsong Song, Xiao Huang, Hai Li
Summary: Encapsulating silver nanoparticles in transition-metal dichalcogenide nanoscrolls significantly enhances the light-matter interaction, resulting in up to 500 times increased photosensitivity and showing great potential for high-performance optoelectronic devices.
INORGANIC CHEMISTRY
(2021)
Article
Materials Science, Multidisciplinary
Lemin Jia, Feng Huang, Wei Zheng
Summary: This study reports the details and results of VUV photodetectors based on high-quality AlN heterojunctions. It achieved extremely low dark current and demonstrated appreciable spectral response and high gain at room temperature. These integratable detectors are highly attractive for future single-photon detection and imaging at VUV wavelengths.
ADVANCED OPTICAL MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Seongwon Yoon, Gyeong Seok Lee, Kyu Min Sim, Myeong-Jong Kim, Yun-Hi Kim, Dae Sung Chung
Summary: This study explores the impact of end-functionalization of a novel extended aromatic fused-ring non-fullerene acceptor on carrier trap/transit time in PM-OPDs. It is found that fluorination of the NFA can enhance the deepest lowest unoccupied molecular orbital level and non-isotropic molecular ordering, leading to longer carrier lifetime. Additionally, fluorination of the NFA can improve its hydrophobic nature, allowing for efficient injection barrier thinning and maximizing hole injection efficiency from the cathode.
ADVANCED FUNCTIONAL MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Harmanpreet Kaur Sandhu, John Wellington John, Alka Jakhar, Abhishek Sharma, Alok Jain, Samaresh Das
Summary: This study demonstrates a nanolayered MoSe2/GaN heterojunction photodetector that is capable of efficient broadband photodetection. Through experimental analysis and simulation verification, it is shown that the device exhibits high responsivity and detectivity, and the energy band structure and transport mechanism are thoroughly studied.
ADVANCED MATERIALS INTERFACES
(2022)
Article
Chemistry, Physical
Metikoti Jagadeeswararao, Kyu Min Sim, Sangjun Lee, Mingyun Kang, Sanghyeok An, Geon-Hee Nam, Hye Ryun Sim, Elham Oleiki, Geunsik Lee, Dae Sung Chung
Summary: PM-type photodetectors with high EQE can be achieved by engineering trap states and trap-assisted charge injection. The introduction of Bi and Br under specific stoichiometric conditions leads to efficient trap states for holes in lead-free Cs1.98AgBi1.15Br7.9 double perovskite. The diode structure ITO/SnO2/Cs1.98AgBi1.15Br7.9/P3HT/MoOx/Ag demonstrates successful realization of selective hole traps and resulting band bending/electron injection, resulting in high EQE, responsivity, and specific detectivity.
CHEMISTRY OF MATERIALS
(2023)
Article
Chemistry, Physical
Kailei Lu, Yucheng Ye, Wenhan Han, Cong Zhang, Lexing Liang, Haifeng Yuan, Yanli Shi, Jianqi Qi, Tiecheng Lu
Summary: In this study, a transparent ceramic material with light-shielding properties was successfully prepared by controlling the doping concentration and air-annealing temperature. It was found that by adjusting the content of defect clusters, the optical cutoff waveband of the ceramic material can be extended from UV to green light, providing a new approach for the development of lanthanide-doped transparent ceramics for light-shielding windows.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Zeng Liu, Ling Du, Shao-Hui Zhang, Lei Li, Zhao-Ying Xi, Jin-Cheng Tang, Jun-Peng Fang, Mao-Lin Zhang, Li-Li Yang, Shan Li, Pei-Gang Li, Yu-Feng Guo, Wei-Hua Tang
Summary: A metal-semiconductor-metal (MSM) photodetector was constructed using microprocessing techniques, incorporating a β-gallium oxide thin film. The photodetector exhibited high photoresponsivity, specific detectivity, external quantum efficiency, and a linear dynamic range under 254-nm UV light illumination. The high photoconductive gain observed may lead to persistent photocurrent and suggest potential use in high deep-ultraviolet photoresponse applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Chemistry, Multidisciplinary
Baskar Senthilkumar, Angalakurthi Rambabu, Chinnasamy Murugesan, Saluru Krupanidhi, Prabeer Barpanda
Article
Physics, Applied
Deependra Kumar Singh, Basanta Roul, Rohit Pant, Arun Malla Chowdhury, K. K. Nanda, S. B. Krupanidhi
APPLIED PHYSICS LETTERS
(2020)
Article
Engineering, Electrical & Electronic
Rohit Kumar Pant, Basanta Roul, Deependra Kumar Singh, Arun Malla Chowdhury, K. K. Nanda, S. B. Krupanidhi
Summary: Self-aligned GaN nanorods of various densities are grown on an r-plane Al2O3 substrate using a plasma-assisted molecular beam epitaxy system. The nanorods have an inclination of 60 degrees from the substrate, while the GaN thin film grows along the [11-20] direction and nanorods preferentially grow along the [0002] axis, mimicking the Gaussian distribution of Schottky barriers. Increasing the GaN nanorod density results in a systematic reduction of the Schottky barrier, providing a tunable Gaussian distribution of Schottky barriers suitable for replacing conventional multi-level electrode stacking techniques.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2021)
Article
Physics, Applied
Deependra Kumar Singh, Rohit Kumar Pant, K. K. Nanda, S. B. Krupanidhi
Summary: A new type of broadband photodetector based on MoS2/GaN/Si heterojunction is reported, which exhibits wavelength selectivity through photocurrent polarity inversion and high spectral response in a broad range of wavelengths. The device shows potential for futuristic photonic applications without the need for filters.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
Basanta Roul, Deependra Kumar Singh, Rohit Pant, Arun Malla Chowdhury, K. K. Nanda, S. B. Krupanidhi
Summary: This study presents a detailed report on the modulation of electrical properties of VO2/Si heterostructures by applying an external electrical field across VO2 thin films. The results show a reversible semiconductor-to-metal transition and hysteresis loop in the resistance of the device around the transition temperature of the VO2 thin film. Additionally, significant changes in junction current were observed when an external bias was applied on the VO2 thin film, demonstrating the potential for external control of electrical transport in vertical heterostructures.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Materials Science, Multidisciplinary
Shuchi Kaushik, Ashok Kumar Kapoor, Rohit Kumar Pant, Saluru Baba Krupanidhi, Rajendra Singh
Summary: The study reports the observation of negative photoconductivity in GaN nanorods, with a proposed model of trapping of photogenerated electrons by trap states. As the power density increases, the density of trapped electrons approaches the density of available trap states slowly, resulting in a significant drop in illumination current.
Article
Physics, Applied
Pius Augustine, Kishan Lal Kumawat, Deependra Kumar Singh, Saluru Baba Krupanidhi, Karuna Kar Nanda
Summary: A heterostructure of MoS2/SnO2 has been fabricated to achieve self-powered broadband photodetection ranging from UV-visible to near-infrared wavelength by utilizing the built-in electric potential at SnO2/MoS2 interface. The device exhibits excellent photoresponse with high responsivity and detectivity under near-infrared illumination, as well as fast response time. The excellent performance is attributed to the high electron transport behavior of SnO2 and the built-in electric field at the interface.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Deependra Kumar Singh, Pukhraj Prajapat, Jyoti Saroha, Rohit Kumar Pant, Shailesh Narain Sharma, Karuna Kar Nanda, Saluru Baba Krupanidhi, Govind Gupta
Summary: The photodetection properties of a-GaN nanorods-based photodetector and the effect of decorating silver nanoparticles are investigated. The original a-GaN detector exhibits negative photoconductivity, attributed to defect states in GaN nanorods. Introduction of nanoparticles reverses the photocurrent polarity, leading to a significant enhancement in the photoresponsivity due to the passivation of surface defect states and reduced dark current.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Review
Materials Science, Multidisciplinary
Kavya Ravindran, Jayjit Kumar Dey, Aryan Keshri, Basanta Roul, Saluru Baba Krupanidhi, Sujit Das
Summary: This review focuses on the topological phenomena at oxide interfaces and their applications in high-density low-energy nonvolatile memory and spintronic devices. The synthesis of high-quality ultrathin films and their characterization through experimental and theoretical methods have allowed the explanation of promising quantum phenomena and exotic phases. The review also discusses interesting interface aspects in ferroic thin films and heterostructures, and provides an overview of future research directions.
MATERIALS FOR QUANTUM TECHNOLOGY
(2023)
Article
Engineering, Electrical & Electronic
Arun Malla Chowdhury, Deependra Kumar Singh, Basanta Roul, K. K. Nanda, S. B. Krupanidhi
Summary: This study demonstrates a self-powered, broad band, and ultrafast photodetector based on nanorods/epilayer heterojunction, showing outstanding photodetection performance in UV, visible, and IR ranges. The maximum responsivity observed, along with response and recovery times, provides important insights for further research on the properties of such heterojunction devices.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
Kishan Lal Kumawat, Deependra Kumar Singh, Karuna Kar Nanda, Saluru Baba Krupanidhi
Summary: Metal dichalcogenide semiconductors have shown great performance in various optoelectronic applications, but low carrier mobility has restricted their use in highly responsive photodetectors. By incorporating SnSe2 with reduced graphene oxide (RGO) to form a SnSe2-RGO bulk heterojunction and depositing it on a MoS2 film, a self-powered photodetector with excellent performance was achieved.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
