Design and Analysis of Polarity Controlled Electrically Doped Tunnel FET With Bandgap Engineering for Analog/RF Applications

标题
Design and Analysis of Polarity Controlled Electrically Doped Tunnel FET With Bandgap Engineering for Analog/RF Applications
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 2, Pages 412-418
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2016-12-29
DOI
10.1109/ted.2016.2637638

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