Extenuation of Stress and Defects in GaN Films Grown on a Metal–Organic Chemical Vapor Deposition-GaN/c-Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy
Extenuation of Stress and Defects in GaN Films Grown on a Metal–Organic Chemical Vapor Deposition-GaN/c-Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy
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