期刊
IEEE SENSORS JOURNAL
卷 17, 期 9, 页码 2792-2796出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2017.2674672
关键词
Ion-sensitive field effect transistor; channel doping; honeycomb structure; low frequency noise; pH sensor; depletion-mode
资金
- Ministry of Science, ICT and Future Planning, South Korea, [IITP-R0346-16-1007]
- Regional Software Convergence Products Commercialization Project
- National IT Industry Promotion Agency [S0417-16-1004]
Inversion-mode (IM) and depletion-mode (DM) ion-sensitive field effect transistors (ISFETs) are investigated in terms of dc characteristics, pH response and low-frequency noise (LFN) characteristics. The dc characteristics show a low threshold voltage (V-TH) of 28 mV for the DM ISFETs, which is preferred for the long lifetime of the pseudo-reference electrode. The DM ISFETs exhibit an enhanced pH response in the subthreshold region, which comes from the lower sub-threshold swing. The LFN analysis for both devices shows similar level of noise equivalent current (I-n.RMS) near V-TH; otherwise, a reduction of I-n.RMS is obtained in the DM ISFETs in the linear region. In addition, the signal-to-noise ratio of the DM ISFETs is improved by 82.9% compared with the IM ISFETs in the sub-threshold region. Consequently, the DM ISFETs can be a better sensor platform for low-power, portable, and high-precision performance.
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