期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 29, 期 1, 页码 114-117出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2016.2629512
关键词
High power; narrow linewidth; distributed Bragg reflector laser; frequency doubling
资金
- Finnish Tekes [40064/14]
- European Space Agency [4000110645/13/NL/HB]
- European Commission [619806]
We report narrow-linewidth 1180-nm GaInNAs/GaAs distributed Bragg reflector lasers reaching up to similar to 500-mW continuous-wave output power at room temperature. The lasers employ surface gratings, which avoided the problematic regrowth and enabled a high side-mode suppression ratio over a relatively large mode-hop-free tuning range. The wavelength tuning rates of 0.1 nm/degrees C and 1 pm/mA were obtained by changing the mount temperature and the drive current, respectively. The lasers exhibit a narrow emission linewidth (<250 kHz) even at high output power levels. The side-mode suppression ratio is relatively independent of the power level and remains higher than 50 dB even in the vicinity of the roll-off point. An outstanding temperature stability is provided by good carrier confinement in the GaInNAs/GaAs quantum well. A 2000 h burn-in with constant 1.5 A bias at 20 degrees C improved the output characteristics slightly and did not reveal any failure among the tested components.
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