期刊
IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 52, 期 2, 页码 406-422出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2016.2627547
关键词
Device nonlinearity; frequency multiplier; frequency quadrupler; harmonic power; optimum activity conditions; power maximization; power radiators; SiGe; terahertz (THz)
We propose a nonlinear device model and a systematic methodology to generate maximum power at any desired harmonic. The proposed power optimization technique is based on the Volterra-Wiener theory of nonlinear systems. By manipulating the device nonlinearity and optimizing the embedding network, optimum conditions for harmonic power generation are provided. Using this theory, a 920-944-GHz frequency quadrupler is designed in a 130-nm SiGe: C process. The circuit achieves the peak output power of -17.3 and -10 dBm of effective isotropic radiated power and consumes 5.7 mW of dc power. To the best of our knowledge, this circuit demonstrates the highest generated power among Si/SiGe-based sources at this frequency range.
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