GaN Nanowire n-MOSFET With 5 nm Channel Length for Applications in Digital Electronics

标题
GaN Nanowire n-MOSFET With 5 nm Channel Length for Applications in Digital Electronics
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 7, Pages 859-862
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2017-05-13
DOI
10.1109/led.2017.2703953

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