Bending Stress Induced Performance Change in Plastic Oxide Thin-Film Transistor and Recovery by Annealing at 300 °C

标题
Bending Stress Induced Performance Change in Plastic Oxide Thin-Film Transistor and Recovery by Annealing at 300 °C
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 8, Pages 1035-1038
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2017-06-28
DOI
10.1109/led.2017.2718565

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