4.6 Article

Highly Scaled Ruthenium Interconnects

期刊

IEEE ELECTRON DEVICE LETTERS
卷 38, 期 7, 页码 949-951

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2709248

关键词

Ruthenium; thin films; interconnects

向作者/读者索取更多资源

Ruthenium has emerged as a promising candidate to substitute Cu as the interconnect metallization in future technology nodes. Here, we demonstrate area scaling of Ru wires down to cross-sectional areas of 33 nm(2) through subtractive patterning by using a metal-spacer patterning technique. The wires were characterized by physical as well as electrical measurements and demonstrate low resistivity, between 20 and 35 mu Omega cm for cross-sectional areas between 175 and 33 nm(2).

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据