期刊
IEEE ELECTRON DEVICE LETTERS
卷 38, 期 7, 页码 949-951出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2709248
关键词
Ruthenium; thin films; interconnects
Ruthenium has emerged as a promising candidate to substitute Cu as the interconnect metallization in future technology nodes. Here, we demonstrate area scaling of Ru wires down to cross-sectional areas of 33 nm(2) through subtractive patterning by using a metal-spacer patterning technique. The wires were characterized by physical as well as electrical measurements and demonstrate low resistivity, between 20 and 35 mu Omega cm for cross-sectional areas between 175 and 33 nm(2).
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