期刊
IEEE ELECTRON DEVICE LETTERS
卷 38, 期 9, 页码 1248-1251出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2723917
关键词
Electric-double-layer; synaptic plasticity
资金
- Ningbo Science and Technology Innovation Team [2016B10005]
- National Natural Science Foundation of China [51402321]
- Key Research Program of Frontier Sciences, CAS [QYZDB-SSW-JSC047]
- Youth Innovation Promotion Association CAS [2014259]
- Ningbo Natural Science Foundation [2017A610098]
- Graduate Student Research and Innovation Program in Jiangsu Province [SJLX16_0437]
Indium-tin-oxide synaptic transistors using proton conducting nanogranular phosphorosilicate glass as gate dielectric are fabricated. Humidity-dependent proton gating behaviors are observed. Moreover, synaptic plasticities are mimicked on the proton gated oxide synaptic transistors. Interestingly, enhanced synaptic facilitation is observed at higher relative humidity originated from the strengthened proton gating. An oxide synaptic transistor with humidity-dependent synaptic plasticities may find potential applications in neuromorphic platforms.
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